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Fairchild Semiconductor Electronic Components Datasheet

F9020 Datasheet

FJPF9020

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FJPF9020
Monolithic Construction With Built In Base-Emitter
Shunt Resistors
• High Collector-Base Breakdown Voltage : BVCBO = -550V
• High DC Current Gain : hFE = 550 @ VCE = -4V, IC = -1A (Typ.)
• Industrial Use
PNP Epitaxial Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
- 550
- 550
-6
-2
-4
15
150
- 55 ~ 150
V
V
V
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC = - 100uA, IE = 0
IC = - 500uA, IB = 0
IE = - 200mA, IC = 0
VCE = - 550V, IE = 0
VEB = - 6V, IC = 0
VCE = - 4V, IC = - 1A
IC = - 1A, IB = - 20mA
IC = - 1A, IB = - 20mA
1 TO-220F
1.Base 2.Collector 3.Emitter
Equivalent Circuit
C
B
R1
R1 600
R2 150
R2
E
Min. Typ. Max. Units
- 550
V
- 550
V
-6 V
-100 µA
-10 -20 mA
400 550 700
-1.0 - 1.5 V
-1.5 - 2.0
V
©2002 Fairchild Semiconductor Corporation
Rev. A, June 2002


Fairchild Semiconductor Electronic Components Datasheet

F9020 Datasheet

FJPF9020

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Typical Characteristics
-3.0
-2.5 IB = - 40mA
-2.0 IB = - 15mA
-1.5
IB = - 3mA
-1.0
IB = - 1.5mA
-0.5
-0.0
-0 -1 -2 -3 -4 -5
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characterstic
-4
-3
-2
-1 IC = - 2A
IC = - 1A
-0
-1E-3
-0.01
-0.1
I [A], BASE CURRENT
B
- 0.4
Figure 3. VCE(sat) vs. IB Characteristics
-2.0
V = - 4V
CE
-1.5
-1.0
-0.5
-0.0
-0.0
125oC
75oC
-0.5 -1.0
25oC
- 25oC
-1.5 -2.0
-2.5
V [V], BASE-EMITTER VOLTAGE
BE
-3.0
Figure 5. Base-Emitter On Voltage
©2002 Fairchild Semiconductor Corporation
1000
V = - 4V
CE
125oC
75oC
100
25oC
- 25oC
10
- 0.03
-0.1 -1
IC [A], COLLECTOR CURRENT
Figure 2. DC current Gain
-4
-3
I / I = 50
CB
-2
125oC
-1 75oC
-0
- 0.2
25oC - 25oC
-1
IC [A], COLLECTOR CURRENT
-4
Figure 4. Collector-Emitter Saturation Voltage
1000
f = 1MHz
100
10
-0
-5 -10 -15 -20 -25
V [V], COLLECTOR-BASE VOLTAGE
CB
Figure 6. Output Capacitance
Rev. A, June 2002


Part Number F9020
Description FJPF9020
Maker Fairchild Semiconductor
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