FCA16N60N
Features
- RDS(on) = 0.17Ω ( Typ.)@ VGS = 10V, ID = 8A
- Ultra low gate charge ( Typ. Qg = 40.2n C)
- Low effective output capacitance
- 100% avalanche tested
- Ro HS pliant
Description
The Supre MOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, Supre MOS provides world class Rsp, superior switching performance and ruggedness. This Supre MOS MOSFET fits the industry’s AC-DC SMPS requirements for PFC, server/tele power, FPD TV power, ATX power, and industrial power applications.
G DS
TO-3PN FCA Series
MOSFET Maximum Ratings TC = 25o C unless otherwise noted-
Symbol VDSS VGSS ID IDM
..net
Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy MOSFET dv/dt Ruggedness Peak...
