Download FCD7N60 Datasheet PDF
FCD7N60 datasheet preview
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FCD7N60 Key Features

  • 650 V @ TJ = 150°C
  • Typ. RDS(on) = 530 mΩ
  • Ultra Low Gate Charge (Typ. Qg = 23 nC)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 60 pF)
  • 100% Avalanche Tested
  • RoHS pliant
  • LCD / LED TV and Monitor
  • Lighting
  • Solar Inverter
  • AC-DC Power Supply

FCD7N60 Description

SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the...