FCD9N60NTM
Description
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs.
Key Features
- RDS(on) = 330 mΩ (Typ.) @ VGS = 10 V, ID = 4.5 A
- Ultra Low Gate Charge (Typ. Qg = 17.8 nC)
- Low Effective Output Capacitance
- 100% Avalanche Tested
