FCH125N60E Datasheet - Fairchild Semiconductor

N-Channel SuperFET II Easy-Drive MOSFET

FCH125N60E Features

* 650 V @TJ = 150°C

* Typ. RDS(on) = 102 mΩ

* Ultra Low Gate Charge (Typ. Qg = 75 nC)

* Low Effective Output Capacitance (Typ. Coss(eff) = 258 pF)

* 100% Avalanche Tested

* RoHS Compliant Applications

* Telecom / Sever Power Supplies

FCH125N60E General Description

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switchi.

FCH125N60E Datasheet (695.03 KB)

FCH125N60E Datasheet Preview — Preview of FCH125N60E PDF

Datasheet Details

Part number:

FCH125N60E

Manufacturer:

Fairchild Semiconductor

File Size:

695.03 KB

Description:

N-channel superfet ii easy-drive mosfet.
FCH125N60E N-Channel SuperFET® II Easy-Drive MOSFET FCH125N60E N-Channel SuperFET® II Easy-Drive MOSFET 600 V, 29 A, 125 mΩ November 2015 .

📁 Related Datasheet

FCH125N60E N-Channel MOSFET (ON Semiconductor)

FCH125N65S3R0 N-Channel Power MOSFET (ON Semiconductor)

FCH104N60 N-Channel MOSFET (Fairchild Semiconductor)

FCH104N60 N-Channel MOSFET (INCHANGE)

FCH104N60F MOSFET (Fairchild Semiconductor)

FCH104N60F N-Channel MOSFET (ON Semiconductor)

FCH104N60F-F085 N-Channel MOSFET (ON Semiconductor)

FCH10A03L Schottky Barrier Diode (Kyocera)

FCH10A03L Schottky Barrier Diode (Nihon Inter Electronics)

FCH10A04 Schottky Barrier Diode (Nihon Inter Electronics)

TAGS

FCH125N60E N-Channel SuperFET Easy-Drive MOSFET Fairchild Semiconductor

Image Gallery

FCH125N60E Features

FCH125N60E General Description

Datasheet Details

File Size:

Description:

FCH125N60E Distributor