FCH25N60N mosfet equivalent, n-channel mosfet.
SupreMOS®
January 2011
tm
N-Channel MOSFET
600V, 25A, 0.126Ω Description
The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, empl.
* RDS(on) = 0.108Ω ( Typ.) at VGS = 10V, ID = 12.5A
* Ultra Low Gate Charge ( Typ. Qg = 57nC)
* Low Effect.
The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise proce.
Image gallery
TAGS
Download (Size : 632.62KB)