FCP104N60 Key Features
- 650 V @ TJ = 150°C
- Typ. RDS(on) = 96 mΩ
- Ultra Low Gate Charge (Typ. Qg = 63 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 280 pF)
- 100% Avalanche Tested
- RoHS pliant
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
FCP104N60F | N-Channel MOSFET |