FCP11N60F Key Features
- 650V @TJ = 150°C
- Typ. RDS(on) = 0.32Ω
- Fast Recovery Type ( trr = 120ns)
- Ultra Low Gate Charge (typ. Qg = 40nC)
- Low Effective Output Capacitance (typ. Cosseff.=95pF)
- 100% avalanche tested
- Part: FCP11N60F
- Manufacturer: Fairchild (official site)
- Size: 390.33 KB
Other FCP11N60F Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
FCP11N60N | N-Channel MOSFET |
FCP11N60F Description
SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very...