FCP150N65F Key Features
- 700 V @ TJ = 150°C
- Typ. RDS(on) = 133 mΩ
- Ultra Low Gate Charge (Typ. Qg = 72 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 361 pF)
- 100% Avalanche Tested
- RoHS pliant
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
FCP150N65F | N-Channel MOSFET |