600v n-channel mosfet.
* RDS(on) = 170 mΩ (Typ.) @ VGS = 10 V, ID = 8 A
* Ultra Low Gate Charge (Typ. Qg = 40.2 nC)
* Low Effective Output Capacitance (Typ. Coss(eff.) = 176 pF)
such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.
D
GDS
TO-220
GDS
TO-.
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise pro.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 619.65KB)