FCP190N60E Key Features
- 650 V @ TJ = 150°C
- Typ. RDS(on) = 160 mΩ
- Ultra Low Gate Charge (Typ. Qg = 63 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 178 pF)
- 100% Avalanche Tested
- An Integrated Gate Resistor
- RoHS pliant
- Part: FCP190N60E
- Description: MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 802.99 KB
Other FCP190N60E Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
FCP190N60 | N-Channel MOSFET |