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FCP20N60 - N-Channel MOSFET

General Description

SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance.

Key Features

  • 650V @ TJ = 150°C.
  • Typ. RDS(on) = 150 mΩ.
  • Ultra Low Gate Charge (Typ. Qg = 75 nC ).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 165 pF ).
  • 100% Avalanche Tested.

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Full PDF Text Transcription for FCP20N60 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FCP20N60. For precise diagrams, and layout, please refer to the original PDF.

FCP20N60 / FCPF20N60 — N-Channel SuperFET® MOSFET August 2014 FCP20N60 / FCPF20N60 N-Channel SuperFET® MOSFET 600 V, 20 A, 190 mΩ Features • 650V @ TJ = 150°C • Typ. RDS(...

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T® MOSFET 600 V, 20 A, 190 mΩ Features • 650V @ TJ = 150°C • Typ. RDS(on) = 150 mΩ • Ultra Low Gate Charge (Typ. Qg = 75 nC ) • Low Effective Output Capacitance (Typ. Coss(eff.) = 165 pF ) • 100% Avalanche Tested Applications • Solar Inverter • AC-DC Power Supply Description SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche

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