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FCP290N80 - N-Channel MOSFET

General Description

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.

Key Features

  • Typ. RDS(on) = 0.245 .
  • Ultra Low Gate Charge (Typ. Qg = 58 nC).
  • Low Eoss (Typ. 5.6 uJ @ 400 V).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 240 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant.

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FCP290N80 — N-Channel SuperFET® II MOSFET FCP290N80 N-Channel SuperFET® II MOSFET 800 V, 17 A, 0.29  December 2015 Features • Typ. RDS(on) = 0.245  • Ultra Low Gate Charge (Typ. Qg = 58 nC) • Low Eoss (Typ. 5.6 uJ @ 400 V) • Low Effective Output Capacitance (Typ. Coss(eff.) = 240 pF) • 100% Avalanche Tested • RoHS Compliant Applications • AC-DC Power Supply • LED Lighting Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.