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Fairchild Semiconductor Electronic Components Datasheet

FCP290N80 Datasheet

N-Channel MOSFET

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FCP290N80
N-Channel SuperFET® II MOSFET
800 V, 17 A, 0.29
December 2015
Features
• Typ. RDS(on) = 0.245
• Ultra Low Gate Charge (Typ. Qg = 58 nC)
• Low Eoss (Typ. 5.6 uJ @ 400 V)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 240 pF)
• 100% Avalanche Tested
• RoHS Compliant
Applications
• AC-DC Power Supply
• LED Lighting
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching perfor-
mance, dv/dt rate and higher avalanche energy. Consequently,
SuperFET II MOSFET is very suitable for the switching power
applications such as PFC, server/telecom power, FPD TV
power, ATX power and industrial power applications.
D
G
GDS
TO-220
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
S
(f >1 Hz)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Thermal Characteristics
Symbol
RJC
RJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2015 Fairchild Semiconductor Corporation
1
FCP290N80 Rev. 1.0
FCP290N80
800
±20
±30
17
10.8
42
882
3.4
2.12
100
20
212
1.7
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
FCP290N80
0.59
62.5
Unit
oC/W
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FCP290N80 Datasheet

N-Channel MOSFET

No Preview Available !

Package Marking and Ordering Information
Part Number
FCP290N80
Top Mark
FCP290N80
Package Packing Method
TO-220
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
VGS = 0 V, ID = 1 mA, TJ = 25C
800
ID = 1 mA, Referenced to 25oC
-
VDS = 800 V, VGS = 0 V
-
VDS = 640 V, TC = 125oC
-
VGS = ±20 V, VDS = 0 V
-
On Characteristics
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 1.7 mA
2.5
RDS(on)
Static Drain to Source On Resistance
VGS = 10 V, ID = 8.5 A
-
gFS
Forward Transconductance
VDS = 20 V, ID = 8.5 A
-
Dynamic Characteristics
Ciss
Coss
Crss
Coss
Coss(eff.)
Qg(tot)
Qgs
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
-
VDS = 100 V, VGS = 0 V,
f = 1 MHz
-
-
VDS = 480 V, VGS = 0 V, f = 1 MHz -
VDS = 0 V to 480 V, VGS = 0 V
-
VDS = 640 V, ID = 17 A,
-
VGS = 10 V
-
(Note 4)
-
f = 1 MHz
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 400 V, ID = 17 A,
VGS = 10 V, Rg = 4.7
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
ISM
Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 17 A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, ISD = 17 A,
dIF/dt = 100 A/s
-
-
-
(Note 4)
-
-
-
-
-
-
Typ. Max. Unit
-
-
V
0.8
-
V/oC
-
25
A
-
250
-
±100 nA
-
4.5
V
0.245 0.290
20
-
S
2410 3205 pF
75
100 pF
0.36
-
pF
35
-
pF
240
-
pF
58
75
nC
11
-
nC
22
-
nC
0.75
-
22
54
ns
14
38
ns
61
132 ns
2.6
15
ns
-
17
A
-
42
A
-
1.2
V
511
-
ns
12
-
C
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. IAS = 3.4 A, VDD = 50 V, RG = 25 , starting TJ = 25C.
3. ISD 17 A, di/dt 200 A/s, VDD BVDSS, starting TJ = 25C.
4. Essentially independent of operating temperature typical characteristics.
©2015 Fairchild Semiconductor Corporation
2
FCP290N80 Rev. 1.0
www.fairchildsemi.com



Part Number FCP290N80
Description N-Channel MOSFET
Maker Fairchild Semiconductor
Total Page 3 Pages
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