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Fairchild Semiconductor Electronic Components Datasheet

FCPF380N65FL1 Datasheet

N-Channel MOSFET

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December 2014
FCPF380N65FL1
N-Channel SuperFET® II FRFET® MOSFET
650 V, 10.2 A, 380 mΩ
Features
• 700 V @TJ = 150°C
• RDS(on) = 320 mΩ (Typ.)
• Ultra Low Gate Charge (Typ. Qg = 33 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 165 pF)
• 100% Avalanche Tested
• RoHS Compliant
Applications
• LCD / LED / PDP TV • Telecom / Server Power Supplies
• Solar Inverter
• AC - DC Power Supply
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching
performance, dv/dt rate and higher avalanche energy.
Consequently, SuperFET II MOSFET is very suitable for the
switching power applications such as PFC, server/telecom
power, FPD TV power, ATX power and industrial power
applications. SuperFET II FRFET® MOSFET’s optimized body
diode reverse recovery performance can remove additional
component and improve system reliability.
D
G
GDS
TO-220F
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(f > 1 Hz)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FCPF380N65FL1
650
±20
±30
10.2
6.4
30.6
212
2.3
0.33
100
50
33
0.26
-55 to +150
300
FCPF380N65FL1
3.8
62.5
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2014 Fairchild Semiconductor Corporation
1
FCPF380N65FL1 Rev. C1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FCPF380N65FL1 Datasheet

N-Channel MOSFET

No Preview Available !

Package Marking and Ordering Information
Part Number
FCPF380N65FL1
Top Mark
FCPF380N65F
Package
TO-220F
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
VGS = 0 V, ID = 10 mA, TJ = 25°C
650
VGS = 0 V, ID = 10 mA, TJ = 150°C 700
ID = 10 mA, Referenced to 25oC
-
VDS = 650 V, VGS = 0 V
-
VDS = 520 V, VGS = 0 V,TC = 125oC
-
VGS = ±20 V, VDS = 0 V
-
On Characteristics
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 1 mA
3
RDS(on)
Static Drain to Source On Resistance
VGS = 10 V, ID = 5.1 A
-
gFS
Forward Transconductance
VDS = 20 V, ID = 5.1 A
-
Dynamic Characteristics
Ciss
Coss
Crss
Coss
Coss(eff.)
Qg(tot)
Qgs
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
-
VDS = 100 V, VGS = 0 V,
f = 1 MHz
-
-
VDS = 380 V, VGS = 0 V, f = 1 MHz
-
VDS = 0 V to 400 V, VGS = 0 V
-
VDS = 380 V, ID = 5.1 A,
-
VGS = 10 V
-
(Note 4)
-
f = 1 MHz
-
Typ.
-
-
0.72
-
40
-
-
320
9.9
1265
42
1.0
25
165
33
6.6
14
0.46
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
-
18
VDD = 380 V, ID = 5.1 A,
VGS = 10 V, Rg = 4.7 Ω
-
7.8
-
45
(Note 4)
-
8
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
ISM
Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 5.1 A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, ISD = 5.1 A,
dIF/dt = 100 A/μs
Notes:
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. IAS = 2.3 A, RG = 25 Ω, Starting TJ = 25°C
3. ISD 5.1 A, di/dt 200 A/μs, VDD 380 V, Starting TJ = 25°C
4. Essentially independent of operating temperature.
-
-
-
-
-
-
-
84
-
224
Quantity
50 units
Max. Unit
-
-
-
10
-
±100
V
V
V/oC
μA
μA
5
V
380 mΩ
-
S
1680 pF
55
pF
-
pF
-
pF
-
pF
43
nC
-
nC
-
nC
-
Ω
46
ns
25.6 ns
100
ns
26
ns
10.2
A
30.6
A
1.2
V
-
ns
-
nC
©2014 Fairchild Semiconductor Corporation
FCPF380N65FL1 Rev. C1
2
www.fairchildsemi.com



Part Number FCPF380N65FL1
Description N-Channel MOSFET
Maker Fairchild Semiconductor
Total Page 3 Pages
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