FDA28N50F Key Features
- RDS(on) = 140 mΩ (Typ.) @ VGS = 10 V, ID = 14 A
- Low Gate Charge (Typ. 80 nC)
- Low Crss (Typ. 38 pF)
- 100% Avalanche Tested
- Improved dv/dt Capability
- RoHS pliant
- Part: FDA28N50F
- Description: N-Channel MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 1.37 MB
Other FDA28N50F Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
FDA28N50 | N-Channel MOSFET |