FDA59N25
Features
- RDS(on) = 49 mΩ (Max.) @ VGS = 10 V, ID = 29.5 A
- Low Gate Charge (Typ. 63 n C)
- Low Crss (Typ. 70 p F)
- 100% Avalanche Tested
- Ro HS pliant
Applications
- PDP TV
- Uninterruptible Power Supply
- AC-DC Power Supply
April 2014
Description
Uni FETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
TO-3PN
Absolute Maximum Ratings TC = 25o C unless otherwise noted.
Symbol
Parameter
VDSS
Drain to Source Voltage
VDS(Avalanche) Repetitive Avalanche Voltage
VGSS ID
Gate to Source Voltage Drain Current
- Continuous (TC = 25o C)
- Continuous (TC = 100o C)
IDM Drain Current
- Pulsed
EAS...
