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Fairchild Semiconductor Electronic Components Datasheet

FDA59N30 Datasheet

300V N-Channel MOSFET

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FDA59N30
300V N-Channel MOSFET
Features
• 59A, 300V, RDS(on) = 0.056@VGS = 10 V
• Low gate charge ( typical 77 nC)
• Low Crss ( typical 80 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
UniFET TM
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
G DS
TO-3P
FDA Series
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
D
!
"
!"
G!
"
"
!
S
FDA59N30
300
59
35
236
±30
1734
59
50
4.5
500
4
-55 to +150
300
Min.
--
0.24
--
Max.
0.25
--
40
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2005 Fairchild Semiconductor Corporation
FDA59N30 Rev. A
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet.in/


Fairchild Semiconductor Electronic Components Datasheet

FDA59N30 Datasheet

300V N-Channel MOSFET

No Preview Available !

Package Marking and Ordering Information
Device Marking
FDA59N30
Device
FDA59N30
Package
TO-3P
Reel Size
-
Tape Width
-
Quantity
30
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min.
Off Characteristics
BVDSS
BVDSS
/ TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VGS = 0V, ID = 250µA
ID = 250µA, Referenced to 25°C
VDS = 300V, VGS = 0V
VDS = 240V, TC = 125°C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
300
--
--
--
--
--
VDS = VGS, ID = 250µA
VGS = 10V, ID = 29.5A
VDS = 40V, ID = 29.5A
3.0
--
(Note 4)
--
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
--
--
VDD = 150V, ID = 59A
RG = 25
VDS = 240V, ID = 59A
VGS = 10V
(Note 4, 5)
(Note 4, 5)
--
--
--
--
--
--
--
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 59A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, IS = 59A
dIF/dt =100A/µs
(Note 4)
--
--
--
--
--
Typ.
--
0.3
--
--
--
--
--
0.047
52
3590
710
80
140
575
120
200
77
22
40
--
--
--
246
6.9
Max Units
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
5.0
0.056
--
V
S
4670
920
120
pF
pF
pF
290
1160
250
410
100
--
--
ns
ns
ns
ns
nC
nC
nC
59 A
236 A
1.4 V
-- ns
-- µC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 0.83mH, IAS = 59A, VDD = 50V, RG = 25, Starting TJ = 25°C
3. ISD 59A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width 300µs, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDA59N30 Rev. A
2 www.fairchildsemi.com
Free Datasheet http://www.datasheet.in/



Part Number FDA59N30
Description 300V N-Channel MOSFET
Maker Fairchild Semiconductor
Total Page 8 Pages
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