FDB060AN08A0
Features
Applications
- RDS(on) = 4.8 mΩ ( Typ.) @ VGS = 10 V, ID = 80 A
- QG(tot) = 73 n C ( Typ.) @ VGS = 10 V
- Low Miller Charge
- Low Qrr Body Diode
- UIS Capability (Single Pulse and Repetitive Pulse)
- Synchronous Rectification for ATX / Server / Tele PSU
- Battery Protection Circuit
- Motor drives and Uninterruptible Power Supplies
Formerly developmental type 82680
TO-220
D2-PAK
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS VGS
EAS PD TJ, TSTG
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (TC < 127o C, VGS = 10V) Continuous (Tamb = 25o C, VGS = 10V, with RθJA = 43o C/W) Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation Derate above 25o C
Operating and Storage Temperature
FDP060AN08A0 FDB060AN08A0
75...
