Datasheet Details
| Part number | FDB120N10 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 543.47 KB |
| Description | N-Channel MOSFET |
| Datasheet | FDB120N10_FairchildSemiconductor.pdf |
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Overview: FDB120N10 — N-Channel PowerTrench® MOSFET FDB120N10 N-Channel PowerTrench® MOSFET 100 V, 74 A, 12 mΩ November.
| Part number | FDB120N10 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 543.47 KB |
| Description | N-Channel MOSFET |
| Datasheet | FDB120N10_FairchildSemiconductor.pdf |
|
|
|
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications • Synchronous Rectification for ATX / Server / Tele PSU • Battery Protection Circuit • Motor Drives and Uninterruptible Power Supplies • Micro Solar Inverter D D G S D2-PAK G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol VDSS VGSS ID IDM EAS dv/dt PD Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation Parameter - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed (TC = 25oC) - Derate Above 25oC (Note 1) (Note 2) (Note 3) TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case, Max.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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FDB120N10 | N-Channel MOSFET Transistor | Inchange Semiconductor |
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