Datasheet4U Logo Datasheet4U.com

FDB2614 - N-Channel MOSFET

Description

This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Synchronous Rectification Battery Protection Circuit

Features

  • RDS(on) = 22.9 mΩ ( Typ. )@ VGS = 10 V, ID = 31 A.
  • High Performance Trench technology for Extremely Low RDS(on).
  • Low Gate Charge.
  • High Power and Current Handing Capability General.

📥 Download Datasheet

📁 Similar Datasheet

  • FDB2670 - N-Channel MOSFET (Kexin)
  • FDB2532 - N-Channel MOSFET (Kexin)
  • FDB2532-F085 - N-Channel MOSFET (ON Semiconductor)
  • FDB2552 - N-Channel MOSFET (Kexin)
  • FDB2552 - 150V 37A N-Channel MOSFET (ON Semiconductor)
  • FDB2570 - N-Channel MOSFET (Kexin)
  • FDB2572 - N-Channel MOSFET (Kexin)
  • FDB2710 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • FDB035AN06A0 - N-Channel MOSFET (INCHANGE)
  • FDB035AN06A0 - N-Channel MOSFET (ON Semiconductor)
Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FDB2614 — N-Channel PowerTrench® MOSFET November 2013 FDB2614 N-Channel PowerTrench® MOSFET 200 V, 62 A, 27 mΩ Features • RDS(on) = 22.9 mΩ ( Typ.)@ VGS = 10 V, ID = 31 A • High Performance Trench technology for Extremely Low RDS(on) • Low Gate Charge • High Power and Current Handing Capability General Description This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Published: |