FDB2614 - N-Channel MOSFET

Fairchild Semiconductor

FDB2614 Datasheet Preview — Preview of FDB2614 PDF

Datasheet Details

Part number	FDB2614
Manufacturer	Fairchild ↗ Semiconductor
File Size	0.99 MB
Description	N-Channel MOSFET
Datasheet	FDB2614_FairchildSemiconductor.pdf

FDB2614 Product details

Description

This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Synchronous Rectification Battery Protection Circuit Motor Drives and Uninterruptible Power Supplies D D G S D2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Volta

Features

RDS(on) = 22.9 mΩ ( Typ. )@ VGS = 10 V, ID = 31 A.
High Performance Trench technology for Extremely Low RDS(on).
Low Gate Charge.
High Power and Current Handing Capability General.

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Published: Mar 27, 2007 |