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FDB390N15A - N-Channel MOSFET

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General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Applications • Consumer Appliances • LED TV • Synchronous Rectification • Uninterruptible Power Supply • Micro Solar Inverter D D G S D2-PAK G S Absolute Maximum Ratings TC = 25oC unless otherwise noted.

Symbol VDSS VGSS ID IDM EAS dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - DC - AC (f > 1 Hz) - Continuous (TC = 25oC,Silicon Limited) - Continuous (TC = 100oC,Silicon Limited) - Pulsed (Note 1) Single Pulsed Avalanche Energy (Note 2) Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate Above 25oC (Note 3) Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds.

Overview

FDB390N15A — N-Channel PowerTrench® MOSFET April 2015 FDB390N15A N-Channel PowerTrench® MOSFET 150 V, 27 A, 39.

Key Features

  • RDS(on) = 33.5 mΩ (Typ. ) @ VGS = 10 V, ID = 27 A.
  • Fast Switching Speed.
  • Low Gate Charge, QG = 14.3 nC (Typ. ).
  • High Performance Trench Technology for Extremely Low RDS(on).
  • High Power and Current Handling Capability.
  • RoHS Compliant.

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