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FDB44N25 - N-Channel UniFET MOSFET

General Description

UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.

This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength.

Key Features

  • RDS(on) = 69 mΩ (Max. ) @ VGS = 10 V, ID = 22 A.
  • Low Gate Charge (Typ. 47 nC).
  • Low Crss (Typ. 60 pF).
  • 100% Avalanche Tested.

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Full PDF Text Transcription for FDB44N25 (Reference)

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FDB44N25 — N-Channel UniFETTM MOSFET FDB44N25 N-Channel UniFETTM MOSFET 250 V, 44 A, 69 mΩ Features • RDS(on) = 69 mΩ (Max.) @ VGS = 10 V, ID = 22 A • Low Gate Charge (Ty...

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• RDS(on) = 69 mΩ (Max.) @ VGS = 10 V, ID = 22 A • Low Gate Charge (Typ. 47 nC) • Low Crss (Typ. 60 pF) • 100% Avalanche Tested Applications • PDP TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supply D November 2013 Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD

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