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FDB5800 Datasheet N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDB5800 — N-Channel Logic Level PowerTrench® MOSFET FDB5800 N-Channel Logic Level PowerTrench® MOSFET 60 V, 80 A, 6 mΩ November.

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Applications • Power tools • Motor drives and Uninterruptible Power Supplies D D G S D2-PAK G S Absolute Maximum Ratings TC = 25oC unless otherwise noted.

Symbol Parameter VDSS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous (TC < 102oC, VGS = 10 V) - Continuous (TC < 90oC, VGS = 5 V) - Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 43oC/W) - Pulsed EAS Single Pulse Avalanche Energy PD - Power Dissipation - Derate above 25oC TJ, TSTG - Operating and Storage Temperature (Note 1) Thermal Characteristics RθJC RθJA RθJA Thermal Resistance Junction to Case TO-263, Max.

Key Features

  • RDS(on) = 4.6 mΩ (Typ. ), VGS = 10 V, ID = 80 A.
  • High Performance Trench Technology for Extermly Low RDS(on).
  • Low Gate Charge.
  • High Power and Current Handing Capability.
  • RoHs Compliant.

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FDB5800 Distributor