Datasheet Details
| Part number | FDB6670AS |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 95.95 KB |
| Description | 30V N-Channel PowerTrench SyncFET |
| Datasheet |
 FDB6670AS Datasheet
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General Description
This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies.
This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.
Key Features
- 31 A, 30 V. RDS(ON) = 8.5 mΩ @ VGS = 10 V RDS(ON) = 10.5 mΩ @ VGS = 4.5 V.
- Includes SyncFET Schottky body diode.
- Low gate charge (28nC typical).
- High performance trench technology for extremely low RDS(ON) and fast switching.
- High power and current handling capability DD G D S TO-220 FDP Series G S TO-263AB FDB Series G Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source.