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FDB8441 Key Features

  • Typ rDS(on) = 1.9mΩ at VGS = 10V, ID = 80A
  • Typ Qg(10) = 215nC at VGS = 10V
  • Low Miller Charge
  • Low Qrr Body Diode
  • UIS Capability (Single Pulse and Repetitive Pulse)
  • Qualified to AEC Q101
  • RoHS pliant

Other FDB8441 Datasheets

Manufacturer Part Number Description
ON Semiconductor Logo onsemi FDB8441-F085 N-Channel MOSFET

FDB8441 Description

FDB8441 N-Channel PowerTrench® MOSFET August 2006 FDB8441 N-Channel PowerTrench® MOSFET 40V, 80A, 2.5mΩ.