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FDB8443 Key Features

  • RDS(on) = 2.3 mΩ ( Typ.)@ VGS = 10 V, ID = 80 A
  • QG(tot) = 142 nC ( Typ.)
  • Low Miller Charge, QGD = 32 nC( Typ.)
  • UIS Capability (Single Pulse and Repetitive Pulse)
  • RoHS pliant

Other FDB8443 Datasheets

Manufacturer Part Number Description
ON Semiconductor Logo onsemi FDB8443-F085 N-Channel MOSFET

FDB8443 Description

FDB8443 N-Channel PowerTrench® MOSFET March 2013 FDB8443 N-Channel PowerTrench® MOSFET tm 40 V, 182 A, 3.0.