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FDB8447L - N-Channel PowerTrench MOSFET

Description

This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the application.

Max rDS(on) = 8.5mΩ at VGS = 10V, ID = 14A Max rDS(on) = 11m

Features

  • General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDB8447L 40V N-Channel PowerTrench® MOSFET February 2007 FDB8447L 40V N-Channel PowerTrench® MOSFET 40V, 50A, 8.5mΩ Features General Description This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the application. „ Max rDS(on) = 8.5mΩ at VGS = 10V, ID = 14A „ Max rDS(on) = 11mΩ at VGS = 4.5V, ID = 11A „ Fast Switching „ RoHS Compliant Application „ Inverter „ Power Supplies D D G G S TO-263AB FDB Series www.DataSheet4U.
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