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FDB8453LZ - N-Channel PowerTrench MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss.

G-S zener has been added to enhance ESD voltage level.

Inverter Power Supplies D

Key Features

  • Max rDS(on) = 7.0mΩ at VGS = 10V, ID = 17.6A.
  • Max rDS(on) = 9.0mΩ at VGS = 4.5V, ID = 14.9A.
  • HBM ESD protection level of 7.6kV typical (note 4).
  • Fast Switching.
  • RoHS Compliant August 2007 tm General.

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Full PDF Text Transcription (Reference)

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FDB8453LZ N-Channel PowerTrench® MOSFET FDB8453LZ N-Channel PowerTrench® MOSFET 40V, 50A, 7.0mΩ Features „ Max rDS(on) = 7.0mΩ at VGS = 10V, ID = 17.6A „ Max rDS(on) = 9.0mΩ at VGS = 4.5V, ID = 14.9A „ HBM ESD protection level of 7.6kV typical (note 4) „ Fast Switching „ RoHS Compliant August 2007 tm General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.