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FDB8453LZ Datasheet N-channel Powertrench MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDB8453LZ N-Channel PowerTrench® MOSFET FDB8453LZ N-Channel PowerTrench® MOSFET 40V, 50A, 7.

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss.

G-S zener has been added to enhance ESD voltage level.

Applications „ Inverter „ Power Supplies D D G S TO-263AB FDB Series G S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25°C TC = 25°C TA = 25°C Single Pulse Avalanche Energy Power Dissipation TC = 25

Key Features

  • Max rDS(on) = 7.0mΩ at VGS = 10V, ID = 17.6A.
  • Max rDS(on) = 9.0mΩ at VGS = 4.5V, ID = 14.9A.
  • HBM ESD protection level of 7.6kV typical (note 4).
  • Fast Switching.
  • RoHS Compliant August 2007 tm General.

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