Datasheet Summary
FDB8453LZ N-Channel PowerTrench® MOSFET
N-Channel PowerTrench® MOSFET
40V, 50A, 7.0mΩ
Features
- Max rDS(on) = 7.0mΩ at VGS = 10V, ID = 17.6A
- Max rDS(on) = 9.0mΩ at VGS = 4.5V, ID = 14.9A
- HBM ESD protection level of 7.6kV typical (note 4)
- Fast Switching
- RoHS pliant
August 2007 tm
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.
Applications
- Inverter
- Power Supplies
D
D
G S
TO-263AB
FDB Series
G S
MOSFET Maximum Ratings TC = 25°C unless otherwise...