FDB8453LZ
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.
Key Features
- Max rDS(on) = 7.0mΩ at VGS = 10V, ID = 17.6A
- Max rDS(on) = 9.0mΩ at VGS = 4.5V, ID = 14.9A
- HBM ESD protection level of 7.6kV typical (note 4)
- Fast Switching
- RoHS Compliant August 2007 tm
