FDB8453LZ Datasheet | Fairchild Semiconductor

Features - Max r DS(on) = 7.0mΩ at VGS = 10V, ID = 17.6A - Max r DS(on) = 9.0mΩ at VGS = 4.5V, ID = 14.9A - HBM ESD protection level of 7.6k V typical (note 4) - Fast Switching - Ro HS pliant August 2007 tm General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level. Applications - Inverter - Power Supplies TO-263AB FDB Series MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25°C TC = 25°C TA = 25°C Single Pulse Avalanche Energy Power Dissipation TC =...