FDB8880
Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Key Features
- rDS(ON) = 14.5mΩ, VGS = 4.5V, ID = 40A rDS(ON) = 11.6mΩ, VGS = 10V, ID = 40A High performance trench technology for extremely low
