rDS(ON) = 14.5mΩ, VGS = 4.5V, ID = 40A rDS(ON) = 11.6mΩ, VGS = 10V, ID = 40A High performance trench technology for extremely low General Description This N-Channel MOSF.

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching s.

FDB8832

FDB8832-F085

FDB8860

FDB8860_F085

FDB8870

FDB8870-F085

FDB8870_F085

FDB8874

FDB8896

FDB8896-F085

FDB8030L

FDB8160_F085

FDB8441