Datasheet Details
| Part number | FDC3535 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 205.42 KB |
| Description | P-Channel MOSFET |
| Datasheet |
 FDC3535 Datasheet
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| Part number | FDC3535 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 205.42 KB |
| Description | P-Channel MOSFET |
| Datasheet |
FDC3535 Datasheet
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Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A Max rDS(on) = 233 mΩ at VGS = -4.5 V, ID = -1.9 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Fast switching speed 100% UIL Tested RoHS Compliant This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
Applications Load Switch Synchronous Rectifier S D D Pin 1 D D SuperSOTTM -6 G S4 D5 D6 3G 2D 1D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 3) (Note 1a) (Note 1b) Ratings -80 ±20 -2.1 -10 37 1.6 0.7 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1a) 30 78 °C/W Device Marking .535 Device FDC3535 Package SSOT-6 Reel Size 7 ’’ Tape Width 8 mm Quantity 3000 units ©2010 Fairchild Semiconductor Corporation FDC3535 Rev.
C 1 www.fairchildsemi.com FDC3535 P-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250 μA, VGS = 0 V ID = -250 μA, referenced to 25 °C VDS = -64 V, VGS = 0 V VGS = ±20 V, VDS = 0 V -80 V -64 mV/°C -1 ±100 μA nA
FDC3535 P-Channel Power Trench® MOSFET FDC3535 P-Channel Power Trench® MOSFET -80 V, -2.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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FDC3535 | P-Channel MOSFET | ON Semiconductor |
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