FDC699P Datasheet P-Channel 2.5V PowerTrench MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDC699P January 2004 FDC699P P-Channel 2.5V PowerTrench MOSFET.

Datasheet Details

Part number	FDC699P
Manufacturer	Fairchild (now onsemi)
File Size	159.49 KB
Description	P-Channel 2.5V PowerTrench MOSFET
Download	FDC699P Download (PDF)

This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process.

It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).

Applications • Battery management • Load Switch • Battery protection

7 A,.
20 V RDS(ON) = 22 mΩ @ VGS =.
4.5 V RDS(ON) = 30 mΩ @ VGS =.
2.5 V.
High performance trench technology for extremely low RDS(ON).
Fast switching speed.
FLMP SuperSOT-6 package: Enhanced thermal performance in industry-standard package size G S S SuperSOT-6TM FLMP S S S 16 25 34 Bottom Drain Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source V.

Part Number	Description
FDC6901L	Integrated Load Switch
FDC697P	P-Channel 1.8V PowerTrench MOSFET
FDC6000NZ	Dual N-Channel 2.5V Specified PowerTrench MOSFET
FDC6020C	Complementary PowerTrench MOSFET
FDC602P	P-Channel MOSFET
FDC6036P	P-Channel 1.8V Specified PowerTrench MOSFET
FDC604P	P-Channel MOSFET
FDC606P	P-Channel 1.8V Specified PowerTrench MOSFET
FDC608PZ	N-Channel MOSFET
FDC610PZ	P-Channel MOSFET