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Fairchild Semiconductor Electronic Components Datasheet

FDD4243_F085 Datasheet

P-Channel PowerTrench MOSFET

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FDD4243_F085
P-Channel PowerTrench® MOSFET
-40V, -14A, 64mΩ
Features
„ Typ rDS(on) = 36mΩ at VGS = -10V, ID = -6.7A
„ Typ rDS(on) = 48mΩ at VGS = -4.5V, ID = -5.5A
„ Typ Qg(TOT) = 21nC at VGS = -10V
„ High performance trench technology for extremely low
rDS(on)
„ RoHS Compliant
„ Qualified to AEC Q101
Applications
„ Inverter
„ Power Supplies
December 2010
©2010 Fairchild Semiconductor Corporation
FDD4243_F085 Rev. C
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FDD4243_F085 Datasheet

P-Channel PowerTrench MOSFET

No Preview Available !

MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (TC< 130oC, VGS = 10V)
Pulsed
EAS Single Pulse Avalanche Energe
PD
Power Dissipation
Dreate above 25oC
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
(Note 1)
Ratings
-40
±20
-14
See Figure 4
84
50
0.34
-55 to +175
Units
V
V
A
mJ
W
W/oC
oC
RθJC
Maximum Thermal Resistance Junction to Case
3 oC/W
RθJA
Maximum Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
40
oC/W
Package Marking and Ordering Information
Device Marking
Device
FDD4243
FDD4243_F085
Package
TO252
Reel Size
13”
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Off Characteristics
Test Conditions
Tape Width
12mm
Quantity
2500 units
Min Typ Max Units
BVDSS
ΔBVDSS
ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
On Characteristics
ID = -250μA, VGS = 0V
ID = -250μA, referenced to 25°C
VDS = -32V
VGS = ±20V
TJ = 125oC
-40
-
-
-
-
- -V
-32 - mV/°C
-
-
-1
-100
μA
- ±100 nA
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on) Drain to Source On Resistance
gFS Forward Transconductance
Dynamic Characteristics
VGS = VDS, ID = -250μA
-1.4 -1.6 -3.0
V
ID = –250μA, referenced to 25°C - 4.7 - mV/°C
ID = -6.7A, VGS= -10V
ID = -5.5A, VGS= -4.5V
ID
TJ
=
=
-165.70AoC, VGS=
-10V,
ID = –6.7A, VDS = –5V,
- 36 44
- 48 64 mΩ
- 57 70
- 23 -
S
Ciss
Coss
Crss
RG
Qg(TOT)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller“ Charge
VDS = -20V, VGS = 0V,
f = 1MHz
f = 1MHz
VDD = -20V, VGS = -10V
ID = -6.7A
- 1165 1550 pF
-
165 220
pF
- 90 135 pF
- 4 -Ω
- 21 29 nC
- 3.4 - nC
- 4 - nC
FDD4243_F085 Rev. C
2
www.fairchildsemi.com


Part Number FDD4243_F085
Description P-Channel PowerTrench MOSFET
Maker Fairchild Semiconductor
Total Page 7 Pages
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