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FDD4N60NZ Datasheet N-Channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDD4N60NZ — N-Channel UniFETTM II MOSFET FDD4N60NZ N-Channel UniFETTM II MOSFET 600 V, 3.4 A, 2.

General Description

UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology.

This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength.

In addition, internal gate-source ESD diode allows UniFETTM II MOSFET to withstand over 2kV HBM surge stress.

Key Features

  • RDS(on) = 1.9 Ω (Typ. ) @ VGS = 10 V, ID = 1.7 A.
  • Low Gate Charge (Typ. 8.3 nC).
  • Low Crss (Typ. 3.7 pF).
  • 100% Avalanche Tested.
  • Improved dv/dt Capability.
  • ESD Imoroved Capability.
  • RoHS Compliant.