FDD5N50NZF Key Features
- RDS(on) = 1.47 Ω (Typ.) @ VGS = 10 V, ID = 1.85 A
- Low Gate Charge (Typ. 9 nC)
- Low Crss (Typ. 4 pF)
- 100% Avalanche Tested
- Improved dv/dt Capability
- ESD Imoroved Capability
- RoHS pliant
| Manufacturer | Part Number | Description |
|---|---|---|
| FDD5N50 | N-Channel MOSFET | |
| FDD5N50F | N-Channel MOSFET | |
| FDD5N50U | N-Channel MOSFET |