FDD8586 mosfet equivalent, n-channel powertrench mosfet.
General Description
* Max rDS(on) = 5.5mΩ at VGS = 10V, ID = 35A
* Max rDS(on) = 8.5mΩ at VGS = 4.5V, ID = 33A
* Low gate charge: Qg(TOT) = 34nC(Typ), VGS = 1.
* Max rDS(on) = 5.5mΩ at VGS = 10V, ID = 35A
* Max rDS(on) = 8.5mΩ at VGS = 4.5V, ID = 33A
* Low gate charge: Qg(TOT) = 34nC(Typ), VGS = 10V
* Low gate resistance
* 100% Avalanche tested
* RoHS compliant
* Vcore DC-DC for .
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