Datasheet Details
| Part number | FDD86102 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 487.79 KB |
| Description | N-Channel MOSFET |
| Download | FDD86102 Download (PDF) |
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Overview: FDD86102 N-Channel Shielded Gate PowerTrench® MOSFET FDD86102 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 36 A, 24 mΩ March.
| Part number | FDD86102 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 487.79 KB |
| Description | N-Channel MOSFET |
| Download | FDD86102 Download (PDF) |
|
|
|
Shielded Gate MOSFET Technology Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 8 A Max rDS(on) = 38 mΩ at VGS = 6 V, ID = 6 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Very low Qg and Qgd compared to competing trench technologies Fast switching speed This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.
This process has been optimized for rDS(on), switching performance and ruggedness.
Application DC - DC Conversion 100% UIL tested RoHS Compliant D G S D DT O-P-2A5K2 (T O -25 2) G S MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 4) (Note 3) (Note 1a) Ratings 100 ±20 36 8 75 121 62 3.1 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information 2.0 (Note 1a) 40 °C/W Device Marking FDD86102 Device FDD86102 Package D-PAK(TO-252) Reel Size 13 ’’ Tape Width 16 mm Quantity 2500 units ©2012 Fairchild Semiconductor Corporation 1 FDD86102 Rev.1.9 www.fairchildsemi.com FDD86102 N-Channel Shielded Gate PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage
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