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Fairchild Semiconductor Electronic Components Datasheet

FDD8870_F085 Datasheet

N-Channel PowerTrench MOSFET

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FDD8870_F085
N-Channel PowerTrench® MOSFET
30V, 160A, 3.9mΩ
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(ON) and fast switching speed.
Applications
• DC/DC converters
Jan 2013
Features
• rDS(ON) = 3.9mΩ, VGS = 10V, ID = 35A
• rDS(ON) = 4.4mΩ, VGS = 4.5V, ID = 35A
• High performance trench technology for extremely low
rDS(ON)
• Low gate charge
• High power and current handling capability
• Qualified to AEC Q101
• RoHS Compliant
D
G
S
DTO-P-2A5K2
(TO-252)
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V) (Note 1)
Continuous (TC = 25oC, VGS = 4.5V) (Note 1)
Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 52oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 2)
Power dissipation
Derate above 25oC
Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
D
G
S
Ratings
30
±20
160
150
21
Figure 4
690
160
1.07
-55 to 175
0.94
100
52
Units
V
V
A
A
A
A
mJ
W
W/oC
oC
oC/W
oC/W
oC/W
©2013 Fairchild Semiconductor Corporation
FDD8870_F085 Rev. C1


Fairchild Semiconductor Electronic Components Datasheet

FDD8870_F085 Datasheet

N-Channel PowerTrench MOSFET

No Preview Available !

Package Marking and Ordering Information
Device Marking
FDD8870
F
F
Device
FDD8870_F085
Package
TO-252AA
Reel Size
13”
Tape Width
12mm
Quantity
2500 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250μA, VGS = 0V
VDS = 24V
VGS = 0V
TC = 150oC
VGS = ±20V
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
rDS(ON)
Drain to Source On Resistance
VGS = VDS, ID = 250μA
ID = 35A, VGS = 10V
ID = 35A, VGS = 4.5V
ID = 35A, VGS = 10V,
TJ = 175oC
Dynamic Characteristics
CISS
COSS
CRSS
RG
Qg(TOT)
Qg(5)
Qg(TH)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VDS = 15V, VGS = 0V,
f = 1MHz
VGS = 0.5V, f = 1MHz
VGS = 0V to 10V
VGS = 0V to 5V
VGS = 0V to 1V
VDD = 15V
ID = 35A
Ig = 1.0mA
Switching Characteristics (VGS = 10V)
tON Turn-On Time
td(ON)
Turn-On Delay Time
tr Rise Time
td(OFF)
Turn-Off Delay Time
tf Fall Time
tOFF
Turn-Off Time
VDD = 15V, ID = 35A
VGS = 10V, RGS = 3.3Ω
Drain-Source Diode Characteristics
VSD Source to Drain Diode Voltage
trr
QRR
Reverse Recovery Time
Reverse Recovered Charge
ISD = 35A
ISD = 15A
ISD = 35A, dISD/dt = 100A/μs
ISD = 35A, dISD/dt = 100A/μs
Notes:
1: Package current limitation is 35A.
2: Starting TJ = 25°C, L = 1.77mH, IAS = 28A, VDD = 27V, VGS = 10V.
:
F
Min Typ Max Units
30 - - V
- -1
μA
- - 250
- - ±100 nA
1.2 - 2.5
- 0.0032 0.0039
- 0.0036 0.0044
- 0.0051 0.0063
V
Ω
- 5160 -
pF
- 990 -
pF
- 590 -
pF
- 2.1 -
Ω
- 91 118 nC
- 48 62 nC
- 5 6.5 nC
- 14 - nC
- 9 - nC
- 18 - nC
- - 139 ns
- 9 - ns
- 83 - ns
- 83 - ns
- 42 - ns
- - 189 ns
- - 1.25 V
- - 1.0 V
- - 37 ns
- - 21 nC
©2013 Fairchild Semiconductor Corporation
FDD8870_F085 Rev. C1


Part Number FDD8870_F085
Description N-Channel PowerTrench MOSFET
Maker Fairchild Semiconductor
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