! rDS(ON) = 11.5mΩ, VGS = 10V, ID = 35A ! rDS(ON) = 15mΩ, VGS = 4.5V, ID = 35A ! High performance trench technology for extremely low rDS(ON) ! Low gate charge ! High pow.

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching s.

FDD8880

FDD8870

FDD8870-F085

FDD8870_F085

FDD8874

FDD8876

FDD8878

FDD8896

FDD8896-F085

FDD8896_F085

FDD8424H

FDD8424H_F085A

FDD8426H