Datasheet4U Logo Datasheet4U.com

FDFMA2N028Z - Integrated N-Channel PowerTrench MOSFET and Schottky Diode

Description

MOSFET Max rDS(on) = 68mΩ at VGS = 4.5V, ID = 3.7A Max rDS(on) = 86mΩ at VGS = 2.5V, ID = 3.3A HBM ESD protection level > 2kV (Note 3) Schottky VF < 0.37V @ 500mA Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm RoHS Compl

Features

  • General.

📥 Download Datasheet

📁 Similar Datasheet

  • FDFMA2P029Z - P-Channel MOSFET (ON Semiconductor)
  • FDFMA2P029Z-F106 - P-Channel MOSFET (ON Semiconductor)
  • FDF60BA50 - (FDF60BA50/60) DIODE MODULE F.R.D (SanRex Corporation)
  • FDF60BA60 - (FDF60BA50/60) DIODE MODULE F.R.D (SanRex Corporation)
  • FDFS2P106A - P-Channel MOSFET and Schottky Diode (ON Semiconductor)
  • FDFS6N548 - N-Channel MOSFET and Schottky Diode (ON Semiconductor)
Other Datasheets by Fairchild Semiconductor
  • FDFMA2P029Z - Integrated P-Channel PowerTrench MOSFET and Schottky Diode
  • FDFMA2P853 - Integrated P-Channel PowerTrench MOSFET and Schottky Diode
  • FDFMA2P853T - Integrated P-Channel MOSFET
  • FDFMA2P857 - Integrated P-Channel PowerTrench MOSFET and Schottky Diode
  • FDFMA2P859T - Integrated P-Channel PowerTrench MOSFET and Schottky Diode
  • FDFMA3N109 - Integrated P-Channel PowerTrench MOSFET and Schottky Diode
  • FDFM2N111 - Integrated N-Channel PowerTrench MOSFET and Schottky Diode
  • FDFM2P110 - Integrated P-Channel PowerTrench MOSFET and Schottky Diode

Full PDF Text Transcription

Click to expand full text
FDFMA2N028Z Integrated N-Channel PowerTrench® MOSFET and Schottky Diode July 2014 FDFMA2N028Z Integrated N-Channel PowerTrench® MOSFET and Schottky Diode 20V, 3.7A, 68mΩ Features General Description MOSFET „ Max rDS(on) = 68mΩ at VGS = 4.5V, ID = 3.7A „ Max rDS(on) = 86mΩ at VGS = 2.5V, ID = 3.3A „ HBM ESD protection level > 2kV (Note 3) Schottky „ VF < 0.37V @ 500mA „ Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm „ RoHS Compliant This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications. It features a MOSFET with low on-state resistance, and an independently connected schottky diode with low forward voltage.
Published: |