FDFMA2N028Z diode equivalent, integrated n-channel powertrench mosfet and schottky diode.
General Description
MOSFET
* Max rDS(on) = 68mΩ at VGS = 4.5V, ID = 3.7A
* Max rDS(on) = 86mΩ at VGS = 2.5V, ID = 3.3A
* HBM ESD protection level > 2kV (Not.
It features a MOSFET with low on-state resistance, and an independently connected schottky diode with low forward volta.
MOSFET
* Max rDS(on) = 68mΩ at VGS = 4.5V, ID = 3.7A
* Max rDS(on) = 86mΩ at VGS = 2.5V, ID = 3.3A
* HBM ESD protection level > 2kV (Note 3)
Schottky
* VF < 0.37V @ 500mA
* Low profile - 0.8 mm maximum - in the new package MicroF.
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