FDG361N - N-Channel MOSFET

Fairchild Semiconductor

FDG361N Datasheet Preview — Preview of FDG361N PDF

Datasheet Details

Part number	FDG361N
Manufacturer	Fairchild ↗ Semiconductor
File Size	80.83 KB
Description	N-Channel MOSFET
Datasheet	FDG361N_FairchildSemiconductor.pdf

FDG361N Product details

Description

These N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

Features

0.6 A, 100 V. RDS(ON)= 500 mΩ @ VGS = 10 V RDS(ON)= 550 mΩ @ VGS = 6.0 V.
Low gate charge (3.7nC typical).
Fast switching speed.
High performance trench technology for extremely low RDS(ON).

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Published: Mar 30, 2005 |