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FDH210N08 - N-Channel UniFET MOSFET

General Description

UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.

This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength.

Key Features

  • RDS(on) = 4.65 mΩ (Typ. ) @ VGS = 10 V, ID = 125 A.
  • Low Gate Charge (Typ. 232 nC).
  • Low Crss (Typ. 262 pF).
  • 100% Avalanche Tested.
  • Improved dv/dt Capability.

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FDH210N08 — N-Channel UniFETTM MOSFET FDH210N08 N-Channel UniFETTM MOSFET 75 V, 210 A, 5.5 mΩ Features • RDS(on) = 4.65 mΩ (Typ.) @ VGS = 10 V, ID = 125 A • Low Gate Charge (Typ. 232 nC) • Low Crss (Typ. 262 pF) • 100% Avalanche Tested • Improved dv/dt Capability Applications • Synchronous Rectification for ATX / Server / Telecom PSU • Battery Protection Circuit • Motor Drives and Uninterruptible Power Supplies December 2013 Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength.