FDH44N50 Datasheet | Fairchild Semiconductor

Features - Low Gate Charge Qg Results in Simple Drive Requirement (Typ. 90 n C) - Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness - Reduced RDS(on) (110 mΩ (Typ.) @ VGS = 10 V, ID = 22 A) - Reduced Miller Capacitance and Low Input Capacitance (Typ. Crss = 40 p F) - Improved Switching Speed with Low EMI - 175o C Rated Junction Temperature Description Uni FETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. Applications - Lighting - Uninterruptible Power Supply - AC-DC Power Supply TO-247 Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS VGS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25o C, VGS = 10 V) Continuous (TC = 100o C, VGS = 10 V) Pulsed1 Power Dissipation Derate Above 25o C Operating and Storage Temperature Soldering Temperature for 10 Seconds Mounting Torque, 8-32 or M3 Screw FDH44N50 500 ±30 44 32 176 750 5 -55 to 175 300 (1.6mm from case) 10ibf- in (1.1N- m) Thermal Characteristics +θ +θ Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Junction-to-Ambient, Max. FDH44N50 0.2 40 Unit V V A A A W W/o C o C o C 6? 6? ©2002 Fairchild Semiconductor Corporation FDH44N50 Rev. C1 .fairchildsemi. - N-Channel SMPS Power...