FDI030N06 - N-Channel MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDI030N06
Manufacturer	Fairchild Semiconductor
File Size	581.49 KB
Description	N-Channel MOSFET
Datasheet	FDI030N06 Datasheet
Additional preview pages of the FDI030N06 datasheet.

Product details

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Circuit Motor Drives and Uninterruptible Power Supplies Renewable System D GDS I2-PAK G S MOSFET Maximum Ratings TC = 25oC unless otherwise note.Symbol VDSS V

Features

RDS(on) = 2.6 mΩ (Typ. ) @ VGS = 10 V, ID = 75 A.
Fast Switching Speed.
Low Gate Charge.
High Performance Trench Technology for Extremely Low RDS(on).
High Power and Current Handling Capability.
RoHS Compliant.

📁 Similar Datasheet

FDI036N10A - N-Channel MOSFET (INCHANGE)
FDI045N10A - 100V 164A N-Channel MOSFET (ON Semiconductor)
FDI3632 - N-Channel MOSFET (VBsemi)
FDI9406-F085 - N-Channel MOSFET (ON Semiconductor)
FDI9409-F085 - N-Channel Power MOSFET (ON Semiconductor)

Other Datasheets by Fairchild Semiconductor

FDI038AN06A0 - N-Channel MOSFET
FDI025N06 - MOSFET
FDI040N06 - N-Channel MOSFET
FDI047AN08A0 - N-Channel MOSFET
FDI150N10 - N-Channel PowerTrench MOSFET
FDI2532 - N-Channel MOSFET

Published: Oct 14, 2009 |