FDI038AN06A0
Features
- r DS(ON) = 3.5mΩ (Typ.), V GS = 10V, ID = 80A
- Qg(tot) = 95n C (Typ.), VGS = 10V
- Low Miller Charge
- Low QRR Body Diode
- UIS Capability (Single Pulse and Repetitive Pulse)
- Qualified to AEC Q101
Formerly developmental type 82584
Applications
- Motor / Body Load Control
- ABS Systems
- Powertrain Management
- Injection Systems
- DC-DC converters and Off-line UPS
- Distributed Power Architectures and VRMs
- Primary Switch for 12V and 24V systems
DRAIN (FLANGE)
SOURCE DRAIN SOURCE DRAIN GATE GATE
DRAIN (FLANGE)
TO-220AB
FDP SERIES
TO-262AB
FDI SERIES
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current ID Continuous (TC < 151o C, VGS = 10V) Continuous (Tamb = 25o C, VGS = 10V, with Rθ JA = 62o C/W) Pulsed E AS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25o C Operating and Storage Temperature 80 17 Figure 4 625 310 2.07 -55 to 175 A A A...
