FDI045N10A
Features
- RDS(on) = 3.8 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A
- Fast Switching Speed
- Low Gate Charge, QG = 54 n C (Typ.)
- High Performance Trench Technology for Extremely Low
RDS(on)
- High Power and Current Handling Capability
- Ro HS pliant
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance Power Trench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications
- Synchronous Rectification for ATX / Server / Tele PSU
- Battery Protection Circuit
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
TO-220
I2-PAK
MOSFET Maximum Ratings TC = 25o C unless otherwise noted.
Symbol VDSS VGSS
IDM EAS dv/dt
Parameter
Drain to Source Voltage
Gate to Source Voltage Drain Current Drain Current
- Continuous (TC = 25o C, Silicon Limited)
- Continuous (TC = 100o C, Silicon LImited)
- Continuous (TC = 25o C, Package Limited)
- Pulsed
(Note...
