FDJ1028N
Description
This dual N-Channel 2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. Packaged in FLMP SC75, the RDS(ON) and thermal properties of the device are optimized for battery power management applications.
Key Features
- 3.2 A, 20 V. RDS(ON) = 90 mΩ @ VGS = 4.5 V RDS(ON) = 130 mΩ @ VGS = 2.5 V
- Low gate charge
- High performance trench technology for extremely low RDS(ON)
- FLMP SC75 package: Enhanced thermal performance in industry-standard package size
