* 3.2 A, 20 V. RDS(ON) = 90 mΩ @ VGS = 4.5 V RDS(ON) = 130 mΩ @ VGS = 2.5 V
* Low gate charge
* High performance trench technology for extremely low RDS(ON) <.

* Battery management General Description This dual N-Channel 2.5V specified MOSFET uses Fairchild’s advanced low vol.

This dual N-Channel 2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. Packaged in FLMP SC75, the RDS(ON) and thermal properties of the device are optimized for battery power management applications. S2 S1 G1 5 4 Bottom.

FDJ1027P

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FDJ129P

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