FDJ1028N - N-Channel 2.5 Vgs Specified PowerTrench MOSFET

Description

This dual N-Channel 2.5V speciﬁed MOSFET uses Fairchild’s advanced low voltage PowerTrench process.

Packaged in FLMP SC75, the RDS(ON) and thermal properties of the device are optimized for battery power management applications.

Features

3.2 A, 20 V. RDS(ON) = 90 mΩ @ VGS = 4.5 V RDS(ON) = 130 mΩ @ VGS = 2.5 V.
Low gate charge.
High performance trench technology for extremely low RDS(ON).
FLMP SC75 package: Enhanced thermal performance in industry-standard package size.

Fairchild Semiconductor

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Datasheet Details

Part number	FDJ1028N
Manufacturer	Fairchild Semiconductor
File Size	591.12 KB
Description	N-Channel 2.5 Vgs Specified PowerTrench MOSFET
Datasheet	FDJ1028N Datasheet
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FDJ1028N N-Channel 2.5 Vgs Speciﬁed PowerTrench® MOSFET August 2006 FDJ1028N N-Channel 2.5 Vgs Speciﬁed PowerTrench® MOSFET Features ■ 3.2 A, 20 V. RDS(ON) = 90 mΩ @ VGS = 4.5 V RDS(ON) = 130 mΩ @ VGS = 2.5 V ■ Low gate charge ■ High performance trench technology for extremely low RDS(ON) ■ FLMP SC75 package: Enhanced thermal performance in industry-standard package size Applications ■ Battery management General Description This dual N-Channel 2.5V speciﬁed MOSFET uses Fairchild’s advanced low voltage PowerTrench process. Packaged in FLMP SC75, the RDS(ON) and thermal properties of the device are optimized for battery power management applications. S2 S1 G1 5 4 Bottom Drain Contact 3 2 1 Bottom Drain Contact S1 www.DataSheet4U.

Published: Jun 4, 2007 |