* 8.1 A, 30 V RDS(ON) = 21 mΩ @ VGS = 4.5 V RDS(ON) = 25 mΩ @ VGS = 2.5 V
* ESD protection Diode(note 3)
* Low Profile
  – 0.8 mm maximum
&n.

* Li-Ion Battery Pack PIN 1 S1 S1 G1 G2 Bottom Drain Contact 4 Q2 3 G1 S2 5 6 2 1 S1 S2 S2 S2 G2 Q1 Botto.

This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v on special MicroFET lead frame with all the drains on one side of the package. Features
* 8.1 A, 30 V.

FDM21-05QC

FDM-2B

FDM100-0045SP

FDM3300NZ

FDM3622

FDM606P

FDM6296

FDMA0104

FDMA037N08LC

FDMA1023PZ

FDMA1024NZ

FDMA1025P

FDMA1027P