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FDM2452NZ - Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET

General Description

This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v on special MicroFET lead frame with all the drains on one side of the package.

Key Features

  • 8.1 A, 30 V RDS(ON) = 21 mΩ @ VGS = 4.5 V RDS(ON) = 25 mΩ @ VGS = 2.5 V.
  • ESD protection Diode(note 3).
  • Low Profile.
  • 0.8 mm maximum.
  • in the new package MicroFET 2 x 5 mm.

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Datasheet Details

Part number FDM2452NZ
Manufacturer Fairchild (onsemi)
File Size 137.33 KB
Description Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET
Datasheet download datasheet FDM2452NZ Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDM2452NZ July 2005 FDM2452NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench® MOSFET General Description This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v on special MicroFET lead frame with all the drains on one side of the package. Features • 8.1 A, 30 V RDS(ON) = 21 mΩ @ VGS = 4.5 V RDS(ON) = 25 mΩ @ VGS = 2.5 V • ESD protection Diode(note 3) • Low Profile – 0.