FDMA420NZ
Description
This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(on) @VGS=2.5V on special MicroFET leadframe.
Key Features
- RDS(on) = 30mΩ @ VGS = 4.5 V, ID = 5.7A
- RDS(on) = 40mΩ @ VGS = 2.5 V, ID = 5.0A tm
