FEATURES
GENERAL DESCRIPTION
The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. Max rDS(on) = 30mΩ at VGS = –4.5V, ID = –7.8A Max rDS(on) = 37mΩ at VGS = –2.5V, ID = –6.6A Max rDS(on) = 50mΩ at VGS = –1.8V, ID = –5.5A Max rDS(on) = 90mΩ at VGS = –1.5V, ID = –2.0A Low profile - 0.8mm maximum - in the new package MicroFET 2X2 mm HBM ESD protection level > 3KV typical (Note 3) RoHS Compliant Pin 1 D D G Bottom Drain Contact Drain Source D D 1 2 3 6 5 4 D D S G D D S MicroFET 2X2 (Bottom View) MOSFET MAXIMUM RATINGS
TA = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range (Note 1a) (Note 1b) (Note 1a) Ratings –20 ±8 –7.8 –24 2.4 0.9 –55 to +150 Units V V A W °C Thermal Characteristics RθJA RθJA Thermal Resistance, J...
Fairchild Semiconductor
