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Fairchild Semiconductor Electronic Components Datasheet

FDMA7670 Datasheet

Single N-Channel PowerTrench MOSFET

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FDMA7670
Single N-Channel PowerTrench® MOSFET
January 2012
30 V, 11 A, 15 mΩ
Features
General Description
„ Max rDS(on) = 15 mΩ at VGS = 10 V, ID = 11 A
„ Max rDS(on) = 22 mΩ at VGS = 4.5 V, ID = 9 A
„ Low Profile - 0.8 mm maximum - in the new package
MicroFET 2x2 mm
„ Free from halogenated compounds and antimony oxides
„ RoHS compliant
This device has been designed to provide maximum efficiency
and thermal performance for synchronous buck converters. The
low rDS(on) and gate charge provide excellent switching
performance.
Application
„ DC – DC Buck Converters
Pin 1
Drain
DD G
Source
DD S
MicroFET 2X2 (Bottom View)
Bottom Drain Contact
D1
6D
D2
5D
G3
4S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
TA = 25 °C
Power Dissipation
TA = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
30
±20
11
24
2.4
0.9
–55 to +150
Units
V
V
A
W
°C
RθJC
RθJA
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
6.9
52
145
°C/W
Device Marking
670
Device
FDMA7670
Package
MicroFET 2x2
Reel Size
7 ’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMA7670 Rev.C4
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FDMA7670 Datasheet

Single N-Channel PowerTrench MOSFET

No Preview Available !

Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, referenced to 25 °C
VDS = 24 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 μA
ID = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 11 A
VGS = 4.5 V, ID = 9 A
VGS = 10 V, ID = 11 A, TJ = 125 °C
VDS = 5 V, ID = 11 A
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 15 V, VGS = 0 V
f = 1.0 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDD = 15 V, ID = 11 A
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V
VDD = 15 V,
ID = 11 A
Drain-Source Diode Characteristics
IS Maximum Continuous Drain-Source Diode Forward Current
VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 2 A
(Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 11 A, di/dt = 100 A/μs
Min
30
1.0
Typ
15
2.0
–6
10
14
14
36
1020
315
35
1.7
8
3
19
3
16
8
3.0
2.2
0.8
21
6
Max Units
V
mV/°C
1 μA
100 nA
3.0 V
mV/°C
15
22 mΩ
21
S
1360
415
55
pF
pF
pF
Ω
15 ns
10 ns
34 ns
10 ns
22 nC
10 nC
nC
nC
2A
1.2 V
33 ns
12 nC
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 52 °C/W when mounted
on a 1 in2 pad of 2 oz copper.
b. 145 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
©2012 Fairchild Semiconductor Corporation
FDMA7670 Rev.C4
2
www.fairchildsemi.com


Part Number FDMA7670
Description Single N-Channel PowerTrench MOSFET
Maker Fairchild Semiconductor
Total Page 6 Pages
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