Datasheet Details
| Part number | FDMA7670 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 275.04 KB |
| Description | Single N-Channel MOSFET |
| Download | FDMA7670 Download (PDF) |
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Overview: FDMA7670 Single N-Channel Power Trench® MOSFET FDMA7670 Single N-Channel PowerTrench® MOSFET May 2014 30 V, 11 A, 15.
| Part number | FDMA7670 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 275.04 KB |
| Description | Single N-Channel MOSFET |
| Download | FDMA7670 Download (PDF) |
|
|
|
Max rDS(on) = 15 mΩ at VGS = 10 V, ID = 11 A Max rDS(on) = 22 mΩ at VGS = 4.5 V, ID = 9 A Low Profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm Free from halogenated compounds and antimony oxides RoHS compliant This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters.
The low rDS(on) and gate charge provide excellent switching performance.
Application DC – DC Buck Converters Pin 1 Drain DD G Source Bottom Drain Contact D D D D G S DD S MicroFET 2X2 (Bottom View) MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed TA = 25 °C Power Dissipation TA = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 1a) (Note 1b) Ratings 30 ±20 11 24 2.4 0.9 –55 to +150 Units V V A W °C RθJC RθJA RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Package Marking and Ordering Information 6.9 (Note 1a) 52 (Note 1b) 145 °C/W Device Marking 670 Device FDMA7670 Package MicroFET 2x2 Reel Size 7 ’’ Tape Width 12 mm Quantity 3000 units ©2012 Fairchild Semiconductor Corporation 1 FDMA7670 Rev.C7 www.fairchildsemi.com FDMA7670 Single N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 30 ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V IGSS Gate to Source Leakage Current VGS = 20
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